Direct structural evidences of Mn11Ge8 and Mn5Ge2 clusters in Ge0.96Mn0.04 thin films

Yong Wang; Jin Zou; Zuoming Zhao; Xinhai Han; Xiaoyu Zhou; Wang, Kang L.
March 2008
Applied Physics Letters;3/10/2008, Vol. 92 Issue 10, p101913
Academic Journal
Mn-rich clusters in Mn-doped Ge thin films epitaxially grown on Ge (001) have been investigated by various transmission electron microscopy techniques. Both the mysterious Mn11Ge8 and the hexagonal Mn5Ge2 (a=0.72 nm and c=1.3 nm) clusters were confirmed to coexist in the thicker Ge0.96Mn0.04 film (80 nm). Their possible formation mechanism is attributed to the existence of ordered stacking faults. The fact that no Mn-rich clusters found in thinner films (<=40 nm) suggests that, for a given Mn concentration and growth/annealing condition, a critical thickness exists for the formation of Mn-rich clusters.


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