TITLE

New MEMS memory

PUB. DATE
September 2007
SOURCE
R&D Magazine;Sep2007, Vol. 49 Issue 9, p60
SOURCE TYPE
Trade Publication
DOC. TYPE
Article
ABSTRACT
This article reports tat a DRAM-like mechanical nonvolatile memory (NVM) that is fabricated using CMOS-compatible poly-Si surface micromachining has been reported at the Korea Advanced Institute of Science and Technology (KAIST), Daejeon. The NVM cell is composed of a MEMS switch and capacitor. The switch allows the NVM cell to be non-volatile since the switch eliminates leakage current when the device is OFF due to a mechanical gap between the source and the drain.
ACCESSION #
31311145

 

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