TITLE

Effect of energy relaxation of H0 atoms at the wall on the production profile of H- ions in large negative ion sources

AUTHOR(S)
Takado, N.; Matsushita, D.; Fujino, I.; Hatayama, A.; Tobari, H.; Inoue, T.
PUB. DATE
February 2008
SOURCE
Review of Scientific Instruments;Feb2008, Vol. 79 Issue 2, p02A503
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Production and transport processes of the H0 atoms are numerically simulated using a three-dimensional Monte Carlo transport code. The code is applied to the large JAEA 10 ampere negative ion source under a Cs-seeded condition to obtain a spatial distribution of surface-produced H- ions. In this analysis, we focus on the effect of the energy relaxation of the H0 atoms at the wall on the H- ion production from the H0 atoms. The result indicates that, by considering the energy relaxation of the H0 atoms at the wall, the production profile of the surface-produced H- ion is well reflected in the production profile of the H0 atom production.
ACCESSION #
31216033

 

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