TITLE

Low temperature formation of SiO2/Si structure by nitric acid vapor

AUTHOR(S)
Imamura, Kentarou; Maida, Osamu; Hattori, Kensaku; Takahashi, Masao; Kobayashi, Hikaru
PUB. DATE
December 2006
SOURCE
Journal of Applied Physics;12/1/2006, Vol. 100 Issue 11, p114910
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Si can be oxidized at temperatures between 350 and 500 °C by use of nitric acid (HNO3) vapor, resulting in 5–10 nm SiO2/Si structure. The oxidation kinetics follows a parabolic law, indicating that diffusion of oxidizing species (i.e., oxygen atoms generated by decomposition of HNO3 molecules) through SiO2 is the rate-determining step. The leakage current density flowing through the SiO2 layer formed at 350 °C follows the Poole-Frenkel mechanism, indicating the presence of trap states in the SiO2 band gap, and the trap energy is estimated to be 0.57 eV below the SiO2 conduction band. On the other hand, the leakage current density for the SiO2 layer formed at 500 °C follows the Fowler-Nordheim mechanism, showing the absence of trap states.
ACCESSION #
30106476

 

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