TITLE

Effect of arsenic precipitates on Fermi level in GaAs grown by molecular-beam epitaxy at low temperature

AUTHOR(S)
Chen, Y. H.; Wang, Z. G.
PUB. DATE
March 2000
SOURCE
Journal of Applied Physics;3/15/2000, Vol. 87 Issue 6, p2923
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents information on a study which aimed to discuss the effect of arsenic precipitates on the Fermi level in GaAs grown by molecular-beam epitaxy at low temperature (LT-GaAs). Explanation on the shifts of the Fermi level in LT-GaAs with annealing temperature; Discussion on the role of arsenic precipitates in conventional semi-stimulating GaAs; Conclusions.
ACCESSION #
2947247

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics