Pressure dependence of SiO2 growth kinetics and electrical properties on SiC

Ray, E. A.; Rozen, John; Dhar, Sarit; Feldman, L. C.; Williams, J. R.
January 2008
Journal of Applied Physics;Jan2008, Vol. 103 Issue 2, p023522
Academic Journal
Dry oxidations between 0.25 and 4 atm at 1150 °C are used to characterize the pressure dependence of the growth kinetics of SiO2 along three orientations of the 4H-SiC polytype. The growth curves are studied using the Deal-Grove model. The extracted linear and parabolic constants are found to scale linearly with the pressure up to 2 atm. However, the data indicate that the (0001) Si-face exhibits a retarded growth rate above 2 atm. It is also found that, like Si, there is a critical oxide thickness below which the linear-parabolic model cannot be applied. This value is found to be between 36 and 40 nm for SiO2 on 4H-SiC, and is apparently independent of the crystal orientation and oxidation pressure. The extracted critical thickness and its properties are similar to what is observed on Si, suggesting that the fast growth regime is dictated by the nature of the oxide. Finally, it is shown that the density of interface states (Dit) on the (0001) Si-face is not reduced by faster oxide growth rates within the monitored energy window.


Related Articles

  • Nitrogen Plasma Processing of SiO/4H-SiC Interfaces. Modic, A.; Sharma, Y.K.; Xu, Y.; Liu, G.; Ahyi, A.C.; Williams, J.R.; Feldman, L.C.; Dhar, S. // Journal of Electronic Materials;Apr2014, Vol. 43 Issue 4, p857 

    A nitrogen plasma annealing process for gate dielectric applications in 4H-SiC metal oxide semiconductor (MOS) technology has been investigated. This process results in substantially greater interfacial N coverage at the SiO/4H-SiC interface and lower interface trap densities than the...

  • Cathodoluminescence study of radiative interface defects in thermally grown SiO2/4H-SiC(0001) structures. Yuta Fukushima; Atthawut Chanthaphan; Takuji Hosoi; Takayoshi Shimura; Heiji Watanabe // Applied Physics Letters;6/29/2015, Vol. 106 Issue 26, p1 

    Radiative defects in thermally grown SiO2/4H-SiC(0001) structures and their location in depth were investigated by means of cathodoluminescence spectroscopy. It was found that while luminescence peaks ascribed to oxygen vacancy and nonbridging oxygen hole centers were observed both from thermal...

  • Characterization of SiO2/SiC interface states and channel mobility from MOSFET characteristics including variable-range hopping at cryogenic temperature. Yoshioka, Hironori; Hirata, Kazuto // AIP Advances;Apr2018, Vol. 8 Issue 4, pN.PAG 

    The characteristics of SiC MOSFETs (drain current vs. gate voltage) were measured at 0.14−350 K and analyzed considering variable-range hopping conduction through interface states. The total interface state density was determined to be 5.4×1012 cm−2 from the additional shift in...

  • Physics-based numerical modeling and characterization of 6H-silicon-carbide metal–oxide–semiconductor field-effect transistors. Powell, Stephen K.; Goldsman, Neil; McGarrity, James M.; Bernstein, Joseph; Scozzie, Charles J.; Lelis, Aivars // Journal of Applied Physics;10/1/2002, Vol. 92 Issue 7, p4053 

    A detailed analysis of silicon-carbide (SIC) metal-oxide-semiconductor field-effect-transistor (MOSFET) physics is performed. Measurements of current-voltage characteristics are taken. A device simulator is developed based on the drift-diffusion equations. The model accounts for incomplete...

  • Length Dependent Transition of the Dominant 1/f Noise Mechanism in Si-Passivated Ge-on-Si pMOSFETs. Simoen, E.; Firrincieli, A.; Leys, F. E.; Loo, R.; De Jaeger, B.; Mitard, J.; Claeys, C. // AIP Conference Proceedings;4/23/2009, Vol. 1129 Issue 1, p281 

    The impact of the Si passivation on the low-frequency noise of Ge-on-Si pMOSFETs is investigated. A transition from number to mobility fluctuations dominated 1/f noise is found going from shorter to longer channel transistors.

  • Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors. Si, Mengwei; Gu, Jiangjiang J.; Wang, Xinwei; Shao, Jiayi; Li, Xuefei; Manfra, Michael J.; Gordon, Roy G.; Ye, Peide D. // Applied Physics Letters;3/4/2013, Vol. 102 Issue 9, p093505 

    InGaAs gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs) with 6 nm nanowire thickness have been experimentally demonstrated at sub-80 nm channel length. The effects of forming gas anneal (FGA) on the performance of these devices have been systematically studied. The 30...

  • Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors. Fiorenza, Patrick; Frazzetto, Alessia; Guarnera, Alfio; Saggio, Mario; Roccaforte, Fabrizio // Applied Physics Letters;10/6/2014, Vol. 105 Issue 14, p1 

    The conduction mechanisms and trapping effects at SiO2/4H-SiC interfaces in metal-oxidesemiconductor field effect transistors (MOSFETs) were studied by Fowler-Nordheim (FN) tunnelling and frequency dependent conductance measurements. In particular, the analysis of both MOS capacitors and MOSFETs...

  • Improvement of Channel Mobility in 4H-SiC C-face MOSFETs by H2 Rich Wet Re-Oxidation. Mitsuo Okamoto; Youichi Makifuchi; Tsuyoshi Araoka; Masaki Miyazato; Yoshiyuki Sugahara; Takashi Tsutsumi; Yasuhiko Onishi; Hiroshi Kimura; Shinsuke Harada; Kenji Fukuda; Akihiro Otsuki; Hajime Okumura // Materials Science Forum;2014, Vol. 778-780, p975 

    4H-SiC(000-1) C-face was oxidized in H2O and H2 mixture gas (H2 rich wet ambient) for the first time. H2 rich wet ambient was formed by the catalytic water vapor generator (WVG) system, where the catalytic action instantaneously enhances the reactivity between H2 and O2 to produce H2O. The...

  • First-principles study of GaAs(001)-β2(2×4) surface oxidation and passivation with H, Cl, S, F, and GaO. Wang, Weichao; Lee, Geunsik; Huang, Min; Wallace, Robert M.; Cho, Kyeongjae // Journal of Applied Physics;Jun2010, Vol. 107 Issue 10, p103720 

    The interactions of oxygen atoms on the GaAs(001)-β2(2×4) surface and the passivation of oxidized GaAs(001)-β2(2×4) surface were studied by density functional theory. The results indicate that oxygen atoms adsorbed at back-bond sites satisfy the bond saturation conditions and do...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics