TITLE

Diffuse interface model for electromigration and stress voiding

AUTHOR(S)
Bhate, Deepali N.; Kumar, Ashish
PUB. DATE
February 2000
SOURCE
Journal of Applied Physics;2/15/2000, Vol. 87 Issue 4, p1712
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a study which proposed a diffuse interface or phase field model for stimulating electromigration and stress voiding. Importance of addressing electromigration in designing integrated circuits; Description of sharp and diffuse interface models; Asymptotic analysis of the model.
ACCESSION #
2815349

 

Related Articles

  • Using DFM hot-spot analysis for predicting resist patterns. Brooker, Peter; Koop, Hans; Marquardt, Hartmut // Solid State Technology;Dec2005, Vol. 48 Issue 12, p47 

    The article presents information on the design-for-manufacturing approach that predicts the resist pattern in integrated circuit (IC) design. With each generation of semiconductor process improvements, the minimum feature size of ICs continues to shrink. Some of the underlying challenges driving...

  • Cadence Introduces Voltus-Fi Custom Power Integrity Solution.  // Sensors;8/8/2014, p9 

    The article features the Cadence Voltus-Fi Custom Power Integrity Solution, a transistor-level electromigration and integrated circuit-drop solution developed by Cadence Design Systems, Inc.

  • Electromigration wreaks havoc on IC design. Lloyd, Jim; Overhauser, David // EDN;03/26/98, Vol. 43 Issue 7, p145 

    Presents infomation on electromigration (EM), and how understanding this problem can prolong the life of an integrated circuit. How EM occurs; Why EM occurs; Problem associated with Joule heating; How EM can be prevented. INSET: The basics of electromigration.

  • Electromigration saturation in a simple interconnect tree. Hau-Riege[a], Stefan P.; Thompson[b], Carl V. // Journal of Applied Physics;9/1/2000, Vol. 88 Issue 5, p2382 

    Presents the results of electromigration-saturation experiments carried out on passivated 'L'-shaped interconnects which had three contacts through W-filled vias at the ends of and at the corners of the L's. Applications of currents of different magnitudes and directions in the two limbs of the...

  • Atomistic and computer modeling of metallization failure of integrated circuits by electromigration. Kirchheim, R.; Kaeber, U. // Journal of Applied Physics;7/1/1991, Vol. 70 Issue 1, p172 

    Presents a study on metallization failure of integrated circuits by electromigration. Method of the study; Results and discussion; Conclusion.

  • In situ x-ray microscopic observation of the electromigration in passivated Cu interconnects. Schneider, G.; Hambach, D.; Niemann, B.; Kaulich, B.; Susini, J.; Hoffmann, N.; Hasse, W. // Applied Physics Letters;3/26/2001, Vol. 78 Issue 13, p1936 

    X-ray imaging of electromigration in a passivated Cu interconnect was performed with 100-nm spatial resolution. A time sequence of 200 images, recorded with the European Synchrotron Radiation Facility x-ray microscope in 2.2 h at 4 keV photon energy, visualizes the mass flow of Cu at current...

  • Electromigration critical length effect in Cu/oxide dual-damascene interconnects. Lee, Ki-Don; Ogawa, Ennis T.; Matsuhashi, Hideki; Justison, Patrick R.; Ko, Kil-Soo; Ho, Paul S.; Blaschke, Volker A. // Applied Physics Letters;11/12/2001, Vol. 79 Issue 20, p3236 

    Electromigration tests at temperatures between 340 and 400 °C and current densities between 1.0 and 3.0 MA/cm[sup 2] have been performed to determine the temperature dependence of the critical length effect in 0.5-μm-wide Cu/oxide dual-damascene interconnects with 0.1 μm silicon nitride...

  • Current-crowding-induced electromigration failure in flip chip solder joints. Yeh, Everett C. C.; Choi, W. J.; Tu, K. N.; Elenius, Peter; Balkan, Haluk // Applied Physics Letters;1/28/2002, Vol. 80 Issue 4, p580 

    In a flip chip solder joint, the cross-section of the solder bump is one to two orders of magnitude bigger than that of an interconnect wire. At the contact interface between the bump and the wire, a very large current crowding occurs and it causes a unique and fast electromigration failure in...

  • New technique and analysis of accelerated electromigration life testing in multilevel metallizations. Muray, L. P.; Rathbun, L. C.; Wolf, E. D. // Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1414 

    Electromigration failure of a series-parallel configuration of aluminum interconnects overlayed on tungsten contacts was measured using a novel multiple lognormal analysis. The analysis examined early failure mechanisms and allowed rapid determination of electromigration parameters on a...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics