Conductance of Si nanowires formed by breaking Si-Si junctions

Iwanari, Tomoki; Sakata, Toyo; Miyatake, Yutaka; Kurokawa, Shu; Sakai, Akira
December 2007
Journal of Applied Physics;Dec2007, Vol. 102 Issue 11, p114312
Academic Journal
We have fabricated Si nanowires (NWs) by breaking Si-Si tip-sample junctions and studied their conductance for both p-n and p-p-type junctions at room temperature. Upon breaking the junction by retracting the Si tip from the Si clean surface, the conductance decreases by orders of magnitude from ∼1G0 to ∼10-6G0, where G0 is the quantum unit of conductance. The conductance histogram plotted against log(G/G0) reveals peaklike structures for G>10-3G0, but becomes featureless for 10-6G0


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