Stability of pentacene top gated thin film transistors

Diallo, K.; Erouel, M.; Tardy, J.; André, E.; Garden, J.-L.
October 2007
Applied Physics Letters;10/29/2007, Vol. 91 Issue 18, p183508
Academic Journal
We report on the stability of top gated pentacene field effect transistors processed on Kaptonâ„¢ with Parylene-C as gate dielectric. The influence of bias stress and ambient atmosphere on device characteristics were investigated. Combined influence of moisture and gate bias stress led to an increase of depletion current and subthreshold slope as well as a drift of onset voltage and threshold voltage. We show that devices stressed in the off state exhibit a high stability.


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