TITLE

Anomalous voltage dependence of tunnel magnetoresistance in (Zn, Co)O-based junction with double barrier

AUTHOR(S)
Song, C.; Yang, Y. C.; Li, X. W.; Liu, X. J.; Zeng, F.; Pan, F.
PUB. DATE
October 2007
SOURCE
Applied Physics Letters;10/22/2007, Vol. 91 Issue 17, p172109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Voltage dependent tunnel magnetoresistance (TMR) has been studied in fully epitaxial (Zn,Co)O/ZnO/(Zn,Co)O/ZnO/(Zn,Co)O magnetic tunnel junctions (MTJs) with double barrier. The MTJs show extremely small voltage dependence with “half voltage” over 4 V above 6 K. At 5 K, the TMR as a function of voltage is found to be constant up to 2 V, and then decreases. “TMR transition” occurs when temperature decreases to 3–4 K, and subsequently, the TMR abnormally increases with voltage at 2 K. The anomalous voltage dependent TMR is discussed in terms of the large energy separation between the Fermi level and the mobility edge.
ACCESSION #
27371023

 

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics