Strain analysis of arsenic-doped silicon using CBED rocking curves of low-order reflections

Kenji Tsuda; Hajime Mitsuishi; Masami Terauchi; Kazuo Kawamura
April 2007
Journal of Electron Microscopy;Apr2007, Vol. 56 Issue 2, p57
Academic Journal
Local lattice strains of semiconductor devices have been so far examined using higher order Laue zone (HOLZ) line patterns of convergent-beam electron diffraction (CBED). Recently, strain analyses in highly strained regions near interfaces have been reported using split HOLZ line patterns. In the present paper, it is demonstrated for arsenic-doped silicon that the use of CBED rocking curves of low-order reflections provides a promising new tool for the determination of strain distributions of highly strained specimen areas. That is, the anomalous intensity increase in the CBED rocking curves of low-order reflections is explained using a model structure with a strain gradient in the electron beam direction, which is similar to the models used for the split HOLZ line patterns.


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