TITLE

Strain analysis of arsenic-doped silicon using CBED rocking curves of low-order reflections

AUTHOR(S)
Kenji Tsuda; Hajime Mitsuishi; Masami Terauchi; Kazuo Kawamura
PUB. DATE
April 2007
SOURCE
Journal of Electron Microscopy;Apr2007, Vol. 56 Issue 2, p57
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Local lattice strains of semiconductor devices have been so far examined using higher order Laue zone (HOLZ) line patterns of convergent-beam electron diffraction (CBED). Recently, strain analyses in highly strained regions near interfaces have been reported using split HOLZ line patterns. In the present paper, it is demonstrated for arsenic-doped silicon that the use of CBED rocking curves of low-order reflections provides a promising new tool for the determination of strain distributions of highly strained specimen areas. That is, the anomalous intensity increase in the CBED rocking curves of low-order reflections is explained using a model structure with a strain gradient in the electron beam direction, which is similar to the models used for the split HOLZ line patterns.
ACCESSION #
27041695

 

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