TITLE

Conductivity type conversion in ion-milled p-HgCdTe:As heterostructures grown by molecular beam epitaxy

AUTHOR(S)
Izhnin, I. I.; Dvoretsky, S. A.; Mikhailov, N. N.; Sidorov, Yu. G.; Varavin, V. S.; Mynbaev, K. D.; Pociask, M.
PUB. DATE
September 2007
SOURCE
Applied Physics Letters;9/24/2007, Vol. 91 Issue 13, p132106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Conductivity type conversion in ion-milled As-doped p-HgCdTe heterostructures grown by molecular beam epitaxy on GaAs substrates has been studied. It was found that in these heterostructures, donor center concentration (∼1017 cm-3) after ion milling was much higher than that could have been expected as a result of interaction of interstitial mercury atoms, generated under the milling, with the As acceptors. One possible reason of the donor center formation is the activation of an intrinsic neutral defect, which was present in the HgCdTe:As prior to the ion milling. The nature of the donor centers formed is discussed.
ACCESSION #
26977254

 

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