Kirk effect mechanism in type-II InP/GaAsSb double heterojunction bipolar transistors

Tao, N. G.; Bolognesi, C. R.
September 2007
Journal of Applied Physics;Sep2007, Vol. 102 Issue 6, p064511
Academic Journal
The Kirk effect mechanism is studied in type-II InP/GaAsSb/InP NpN double heterojunction bipolar transistors (DHBTs) both experimentally and through two-dimensional hydrodynamic numerical simulations. We show that the large valence band discontinuity ΔEV at the GaAsSb–InP base/collector heterojunction does not allow hole injection into the InP collector as is the case in homojunction collectors. Instead, a blocking barrier is electrostatically induced in the base layer at high collector current densities: this barrier increases base recombination and decreases the current gain. We show that tunneling transport must be considered at the base/collector heterojunction and that the induced barrier depends on the base layer doping level—effectively, InP/GaAsSb DHBTs display high-current limitations that are also controlled to some extent by the base doping level.


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