TITLE

Buffer free direct growth of GaN on 6H-SiC by metalorganic vapor phase epitaxy

AUTHOR(S)
Lahreche, H.; Leroux, M.
PUB. DATE
January 2000
SOURCE
Journal of Applied Physics;1/1/2000, Vol. 87 Issue 1, p577
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a three steps growth process that enables the growth of high quality mirrorlike Gallium Nitride (GaN) layers without using A1N buffer layers. Physical characteristics of both GaN and Silicon Carbide; Details of the growth method; Strain state and correlated optical properties.
ACCESSION #
2660076

 

Related Articles

  • Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy. Xie, M. H.; Xie, M.H.; Zheng, L. X.; Zheng, L.X.; Cheung, S. H.; Cheung, S.H.; Ng, Y. F.; Ng, Y.F.; Wu, Huasheng; Huasheng Wu; Tong, S. Y.; Tong, S.Y.; Ohtani, N. // Applied Physics Letters;8/21/2000, Vol. 77 Issue 8 

    We observe a significant reduction of threading dislocations in GaN grown on vicinal substrates of SiC(0001). Using scanning tunneling microscopy, we find films grown on vicinal substrates maintain the surface misorientation of the substrate and display terraces with straight edges. On top of...

  • Growth and characterizations of GaN on SiC substrates with buffer layers. Lin, C.F.; Cheng, H.C.; Chi, G. C.; Feng, M. S.; Guo, J. D.; Minghuang Hong, J.; Chen, C. Y. // Journal of Applied Physics;9/1/1997, Vol. 82 Issue 5, p2378 

    Studies the growth and characterizations of galliumnitride on silicon carbide substrates with buffer layers. Enhanced electron mobility; Hall measurement and sheet carrier density; Bulk carrier density and lattice constants.

  • Molecular beam epitaxy growth of GaN on C-terminated 6H-SiC (000[OVERLINE]1[/OVERLINE]) surface. Guan, Z. P.; Guan, Z.P.; Cai, A. L.; Cai, A.L.; Cabalu, J. S.; Cabalu, J.S.; Porter, H. L.; Porter, H.L.; Huang, S. // Applied Physics Letters;10/16/2000, Vol. 77 Issue 16 

    We report the results of successful growth of GaN on the C-terminated surface of SiC. A combination of direct heating and hydrogen plasma treatment was employed for surface preparation. High-quality epitaxy was achieved in epilayers as thin as 2000 Ã…, as evidenced by the x-ray diffraction...

  • Structural properties of cubic GaN epitaxial layers grown on β-SiC. Teles, L. K.; Scolfaro, L. M. R.; Enderlein, R.; Leite, J. R.; Josiek, A.; Schikora, D.; Lischka, K. // Journal of Applied Physics;12/1/1996, Vol. 80 Issue 11, p6322 

    Presents a study which investigated the structural properties of cubic gallium nitride epitaxial layers grown on Î’-silicon carbide substrates. Description of the self-consistent total energy calculation method; Application of system and parameter specifications; Comparison of cohesion...

  • Substrate-polarity dependence of metal-organic vapor-phase epitaxy-grown GaN on SiC. Sasaki, T.; Matsuoka, T. // Journal of Applied Physics;11/1/1988, Vol. 64 Issue 9, p4531 

    Presents a study that described metal-organic vapor-phase epitaxy of gallium nitride on silicon carbide. Methodology; Examination of the surface morphology of gallium nitride; Evaluation of the surface polarity of the samples.

  • Magnesium Outdiffusion from Porous Silicon Carbide Substrates during Autodoping of Gallium Nitride Epilayers. Mynbaeva, M. G.; Lavrent’ev, A. A.; Fomin, A. V.; Mynbaev, K. D.; Lebedev, A. A. // Technical Physics Letters;Jun2003, Vol. 29 Issue 6, p474 

    We have studied the outdiffusion of magnesium from silicon carbide substrates during autodoping of gallium nitride epilayers. The autodoping effect was observed in the case of porous substrates obtained by surface anodization of 6H-SiC wafers. It is established that the magnesium distribution...

  • Luminescence properties of gallium nitride layers grown on silicon carbide substrates by gas-phase epitaxy in a chloride system. Zubrilov, A. S.; Mel’nik, Yu. V.; Tsvetkov, D. V.; Bugrov, V. E.; Nikolaev, A. E.; Stepanov, S. I.; Dmitriev, V. A. // Semiconductors;May97, Vol. 31 Issue 5, p523 

    The luminescence properties of undoped epitaxial layers of gallium nitride grown on silicon carbide substrates by gas-phase epitaxy in a chloride system have been investigated. An edge band (361 nm, 96 K) and defect bands (380, 430, 560 nm, 96 K) were recorded in the photo- and...

  • Test points.  // Solid State Technology;Mar2012, Vol. 55 Issue 2, p2 

    The article announces that silicon carbide (SiC) and gallium nitride (GaN) have been considered as the most promising materials for power devices.

  • Market for GaN and SiC Semiconductors Set to Rise 18X by 2022. Massé, Dan // Microwave Journal;Jun2013, Vol. 56 Issue 6, p55 

    The article predicts that the emerging market for Silicon Carbide (SiC) and Gallium Nitride (GaN) power semiconductors will grow a remarkable factor of 18 in the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics