TITLE

The n-type Gd-doped HfO2 to silicon heterojunction diode

AUTHOR(S)
Ketsman, I.; Losovyj, Y.B.; Sokolov, A.; Tang, J.; Wang, Z.; Belashchenko, K.D.; Dowben, P.A.
PUB. DATE
November 2007
SOURCE
Applied Physics A: Materials Science & Processing;Nov2007, Vol. 89 Issue 2, p489
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Gd-doped HfO2 films were deposited on p-type silicon substrates in a reducing atmosphere. Photoemission measurements indicate the n-type character of Gd-doped HfO2 due to overcompensation with oxygen vacancies. The Gd 4f photoexcitation peak at 5.5 eV below the valence band maximum is identified using both resonant photoemission and first-principles calculations of the f hole. The rectifying (diode-like) properties of Gd-doped HfO2 to silicon heterojunctions are demonstrated.
ACCESSION #
26340261

 

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