Separating systematic from random defects at 65nm and 45nm nodes

August 2007
Solid State Technology;Aug2007, Vol. 50 Issue 8, p8
Trade Publication
The article focuses on the process of separating systematic and random defects from a defect wafer map at 65-nanometer (nm) and 45nm nodes. It is stated that the process allow users to quantify systematic defect types quickly and efficiently from wafer maps. Moreover, the process also prompt corrective action relative to the analysis of the two types of defects.


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