TITLE

Quantitative study of hydrogen-implantation-induced cavities in silicon by grazing incidence small angle x-ray scattering

AUTHOR(S)
Capello, L.; Rieutord, F.; Tauzin, A.; Mazen, F.
PUB. DATE
July 2007
SOURCE
Journal of Applied Physics;7/15/2007, Vol. 102 Issue 2, p026106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We used grazing-incidence small angle x-ray scattering to investigate properties of hydrogen implantation-induced platelets and cavities formed in silicon as a function of the implantation and annealing parameters. Density, orientation, and size (thickness and diameter) of these buried objects can be extracted from quantitative x-ray scattering intensity measurements, in a nondestructive manner. Detailed balance of hydrogen-induced defect evolution can be made with such data. Different defect populations result from different implantation temperatures and a low limit H dose is found for {111} platelets formation.
ACCESSION #
26017464

 

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