Effect of LP-buffer on the structure of ZnO thin films prepared on glass substrate using RF magnetron sputtering

Zhu Xingwen; Li Yingwei; Li Yongqiang; Ma Ji; Xia Yiben
October 2007
Journal of Materials Science: Materials in Electronics;Oct2007, Vol. 18 Issue 10, p1021
Academic Journal
The ZnO thin films with preferential C-orientation and smooth surface have been prepared using an RF magnetron sputtering method by the insertion of low-power (LP) sputtered ZnO buffer. The XRD results show that the C-orientation of the ZnO buffer layer deposited under the RF power of 30 W is much better than that deposited under higher RF power. With the increase of the LP-buffer thickness, the C-orientation as well as the crystal quality of ZnO films improves, the surface becomes smooth and the RMS roughness decreases from 88.4 Ã… to 38.5 Ã…. The ZnO lattice is independent of the insertion of LP buffer.


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