Epitaxial growth of ZrO2 on GaN templates by oxide molecular beam epitaxy

Gu, Xing; Izyumskaya, Natalia; Avrutin, Vitaly; Xiao, Bo; Morkoç, Hadis
July 2007
Applied Physics Letters;7/9/2007, Vol. 91 Issue 2, p022916
Academic Journal
Molecular beam epitaxial growth of ZrO2 has been achieved on GaN (0001)/c-Al2O3 substrates employing a reactive H2O2 oxygen source. A low temperature buffer followed by in situ annealing and high temperature growth has been employed to attain monoclinic, (100)-oriented ZrO2 thin films. The typical full width at half maximum of a 30-nm-thick ZrO2 (100) film rocking curves is 0.4 arc deg and the root-mean-square surface roughness is ∼4 Å. ω-2θ and pole figure x-ray diffraction patterns confirm the monoclinic structure of ZrO2. Data support an in-plane epitaxial relationship of ZrO2 [010]∥GaN[112] and ZrO2 [001]∥GaN[1100]. X-ray diffraction and reflection high-energy electron diffraction analyses reveal in-plane compressive strain, which is mainly due to the lattice mismatch.


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