TITLE

Renesas doubles gate structure in sub-45-nm transistors

AUTHOR(S)
Taylor, Colleen
PUB. DATE
June 2007
SOURCE
Electronic News;6/25/2007, Vol. 53 Issue 26, p4
SOURCE TYPE
Trade Publication
DOC. TYPE
Article
ABSTRACT
The article reports on the announcement made by Renesas Technology Corp. that it has developed what it calls and extremely high-performance transistor technology with low-cost fabrication capability for microprocessors and system-on-a-chip (SoC) devices. According to the company, the new semiconductor manufacturing technology has a p-type transistor with a titanium nitride (TiN) metal gate and an n-type transistor with a conventional polysilicon gate.
ACCESSION #
25760580

 

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