TITLE

Kinetic Monte Carlo Simulation of Epitaxial Thin Film Growth: Formation of Submonolayer Islands and Multilayer Mounds

AUTHOR(S)
Evans, J. W.; Thiel, P. A.; Li, Maozhi
PUB. DATE
June 2007
SOURCE
AIP Conference Proceedings;2007, Vol. 916 Issue 1, p191
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We consider homoepitaxy (or low-misfit heteroepitaxy) via vapor deposition or MBE under UHV conditions. Thin film growth is initiated by nucleation and growth of 2D islands in the submonolayer regime. For atoms subsequently deposited on top of islands, a step edge barrier often inhibits downward transport and produces kinetic roughening during multilayer growth. Such unstable growth is characterized by the formation of 3D mounds (multilayer stacks of 2D islands). Kinetic Monte Carlo (KMC) simulation of suitable atomistic lattice-gas models can address fundamental or general issues related to both submonolayer and multilayer film evolution, and can also provide a predictive tool for morphological evolution in specific systems. Examples of the successes of KMC modeling are provided for metal homoepitaxial film growth, specifically for contrasting behavior in the classic Ag/Ag(100) and Ag/Ag(111) systems. © 2007 American Institute of Physics
ACCESSION #
25522028

 

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