Suppression of InAs/GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer

Ulloa, J. M.; Drouzas, I. W. D.; Koenraad, P. M.; Mowbray, D. J.; Steer, M. J.; Liu, H. Y.; Hopkinson, M.
May 2007
Applied Physics Letters;5/21/2007, Vol. 90 Issue 21, p213105
Academic Journal
The influence of a GaAsSb capping layer on the structural properties of self-assembled InAs/GaAs quantum dots (QDs) is studied on the atomic scale by cross-sectional scanning tunneling microscopy. QDs capped with GaAs0.75Sb0.25 exhibit a full pyramidal shape and a height more than twice that of the typical GaAs-capped QDs, indicating that capping with GaAsSb suppresses dot decomposition. This behavior is most likely related to the reduced lattice mismatch between the dot and the capping layer.


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