Chemical vapor generation of noble metals for analytical spectrometry

Pohl, Pawel; Prusisz, Bartlomiej
June 2007
Analytical & Bioanalytical Chemistry;Jun2007, Vol. 388 Issue 4, p753
Academic Journal
As is apparent from the literature devoted to the analytical atomic spectrometry, chemical vapor generation (CVG) of noble metals by reaction with tetrahydroborate in acidic media may enhance the introduction of these elements into different atomic spectrometric sources. Recent developments in the CVG of noble metals species by reaction with tetrahydroborate in acidic medium are surveyed. Different aspects of this novel technique are discussed, including type of instrumentation used for the reaction, separation and transport of the species, effect of chemical and physical factors, identification of the species, and the efficiency of the process. Limitations and future prospects of the CVG technique are discussed.


Related Articles

  • Chemical vapor generation: are further advances yet possible? Sturgeon, R. E.; Guo, X.; Mester, Z. // Analytical & Bioanalytical Chemistry;Jun2005, Vol. 382 Issue 4, p881 

    Discusses the development of chemical vapor generation (CVG) for the purpose of analytical application. Advantages of CVG for analyses; Background on several approaches to CVG; Information on the expansion of CVG techniques to encompass hydride generation of noble and transition metals.

  • Growth of heteroepitaxial Si[sub 1-x-y]Ge[sub x]C[sub y] alloys on silicon using novel.... Todd, Michael; Matsunaga, Philip // Applied Physics Letters;8/28/1995, Vol. 67 Issue 9, p1247 

    Examines the heteroepitaxial growth of diamond-structured alloys on (100) silicon substrates. Fabrication of carbon-hydrogen free carbon precursor using chemical vapor deposition method; Extraction of film thickness by Rutherford backscattering carbon resonance spectroscopy; Presence of...

  • Enhancement of sensitivity in gas chemiresistors based on carbon nanotube surface functionalized with noble metal (Au, Pt) nanoclusters. Penza, M.; Cassano, G.; Rossi, R.; Alvisi, M.; Rizzo, A.; Signore, M. A.; Dikonimos, Th.; Serra, E.; Giorgi, R. // Applied Physics Letters;4/23/2007, Vol. 90 Issue 17, p173123 

    Multiwalled carbon nanotube (MWCNT) films have been fabricated by using plasma-enhanced chemical vapor deposition system onto Cr–Au patterned alumina substrates, provided with 3 nm thick Fe growth catalyst, for NO2 and NH3 gas sensing applications, at sensor temperature in the range of...

  • Chemical Vapour Deposition (CVD) of metallic layers prepared from silver carboxylates complexes with tertiary phosphines. Szczęsny, R.; Szymańska, I.; Piszczek, P.; Dobrzańska, L.; Szłyk, E. // Materials Science (0137-1339);2005, Vol. 23 Issue 3, p671 

    Silver fluorocarboxylate tertiary phosphine complexes [Ag(O2CR)(PR'3)] (where R = CF3, C2F5, Me3SiCH2; R' = Me, Et) have been used as precursors in the hot-wall Chemical Vapour Deposition (CVD) of silver films. The pyrolysis of Ag(I) compounds and the thermal stability of metallic species...

  • Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy. Banal, Ryan G.; Funato, Mitsuru; Kawakami, Yoichi // Applied Physics Letters;6/16/2008, Vol. 92 Issue 24, p241905 

    AlN layers were grown directly on sapphire (0001) substrates using three different growth sequences based on metal-organic vapor phase epitaxy with an emphasis on initial nucleation processes. These three methods were simultaneous, alternating supply of aluminum and nitrogen sources, and a...

  • Analytical solution of thickness variations in selective area growth by organometallic chemical vapor deposition. Liu, X.; Aspnes, D. E. // Applied Physics Letters;6/22/2009, Vol. 94 Issue 25, p253112 

    Using conformal mapping, we derive an analytic expression for the thickness d of a deposited film as a function of the distance r from a mask edge in selective area growth by organometallic chemical vapor deposition (OMCVD). Adjacent to the mask d∼r-1/2, which is clearly different from the...

  • Structural and electrical characterization of amorphous lanthanum hafnium oxide thin films. Yim Fun Loo; Taylor, Stephen; Murray, Robert T.; Jones, Anthony C.; Chalker, Paul R. // Journal of Applied Physics;5/15/2006, Vol. 99 Issue 10, p103704 

    This paper describes the structural and electronic characterization of lanthanum hafnium oxide thin films deposited by metal organic chemical vapor deposition using a novel precursor mixture. Structural characterization is obtained using x-ray diffraction and cross-sectional transmission...

  • Aluminum incorporation into AlGaN grown by low-pressure metal organic vapor phase epitaxy. Huang, G. S.; Yao, H. H.; Lu, T. C.; Kuo, H. C.; Wang, S. C. // Journal of Applied Physics;5/15/2006, Vol. 99 Issue 10, p104901 

    Aluminum (Al) incorporation in AlxGa1-xN films grown by low-pressure metal organic vapor phase epitaxy using trimethylaluminum (TMAl) and trimethylgallium as group III precursors has been systematically studied. The solid phase Al composition of the AlxGa1-xN films varied nonlinearly with the Al...

  • Low-temperature metalorganic chemical vapor deposition of InP on Si(001). Grundmann, M.; Krost, A.; Bimberg, D. // Applied Physics Letters;1/21/1991, Vol. 58 Issue 3, p284 

    Reports on the successful growth of antiphase domain-free indium phosphide (InP) on silicon (001) [Si(001)] without any preannealing of the Si substrate using low-pressure metalorganic chemical vapor deposition. Temperature versus off-orientation phase diagram of the single/double-step phase...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics