TITLE

TEM and HRXRD Analysis of LP MOVPE Grown InGaP/GaAs epilayers

AUTHOR(S)
Pelosi, Claudio; Bosi, Matteo; Attolini, Giovanni; Germini, Fabrizio; Frigeri, Cesare; Prutskij, Tatiana
PUB. DATE
April 2007
SOURCE
AIP Conference Proceedings;2007, Vol. 893 Issue 1, p29
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The diffusion phenomena at interfaces between GaAs/InGaP layers grown by low pressure MOVPE have been studied by dark field (DF) transmission Electron Microscopy (TEM) and High resolution X-ray Diffractometry (HRXRD). By comparing the results of the two techniques a mismatched layer containing P or P and In has been evidenced. The causes of this behavior are briefly discussed. © 2007 American Institute of Physics
ACCESSION #
24985450

 

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