MBE growth and characterization of MnP and Ge nanowhiskers

Bouravleuv, A. D.; Minami, K.; Sato, Y.; Ishibashi, T.; Sato, K.
April 2007
AIP Conference Proceedings;2007, Vol. 893 Issue 1, p57
Academic Journal
Ge and MnP nanowhiskers have been grown by molecular beam epitaxy (MBE) concurrently on InP and GaAs substrates. The growth of MnP nanowhiskers appears to be caused by catalytic free growth mechanism, whereas the growth of Ge nanowhiskers is found to be amenable to vapour-liquid-solid (VLS) mechanism of growth. The measurements of temperature and magnetic field dependences of magnetization have shown that the samples containing mostly Ge nanowhiskers exhibit ferromagnetic behaviour up to room temperature. © 2007 American Institute of Physics


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