TITLE

In-situ X-ray diffraction study on structural evolution of InAs islands on GaAs(001) during annealing

AUTHOR(S)
Takahasi, Masamitu; Kaizu, Toshiyuki; Mizuki, Jun'ichiro
PUB. DATE
April 2007
SOURCE
AIP Conference Proceedings;2007, Vol. 893 Issue 1, p75
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The evolution of strain inside InAs/GaAs(001) quantum dots during annealing after deposition was studied by in situ grazing-incidence X-ray diffraction. The use of synchrotron radiation and two-dimensional detector enabled measurements at a temporal resolution of 9.6 s. The temperature dependence of the structural change during annealing can be interpreted in terms of the miscibility of InAs and GaAs. © 2007 American Institute of Physics
ACCESSION #
24985427

 

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