In-situ X-ray diffraction study on structural evolution of InAs islands on GaAs(001) during annealing

Takahasi, Masamitu; Kaizu, Toshiyuki; Mizuki, Jun'ichiro
April 2007
AIP Conference Proceedings;2007, Vol. 893 Issue 1, p75
Academic Journal
The evolution of strain inside InAs/GaAs(001) quantum dots during annealing after deposition was studied by in situ grazing-incidence X-ray diffraction. The use of synchrotron radiation and two-dimensional detector enabled measurements at a temporal resolution of 9.6 s. The temperature dependence of the structural change during annealing can be interpreted in terms of the miscibility of InAs and GaAs. © 2007 American Institute of Physics


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