TITLE

Piezoresistance Effect of n-type Silicon; Temperature and Concentration Dependencies, Stress Dependent Effective Masses

AUTHOR(S)
Kanda, Yozo; Matsuda, Kazunori
PUB. DATE
April 2007
SOURCE
AIP Conference Proceedings;2007, Vol. 893 Issue 1, p173
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
N-type piezoresistance (PR) tensor component π44 is essentially independent of temperature and carrier concentration, but depends on them in higher impurity concentration (> 1020) since the Fermi level lowers due to the tail of the density-of-state (DOS). Although conduction effective masses are affected by shear stress, which is the origin of π44, DOS effective mass does not change. The dependencies and nonlinearity of the PR is discussed by taking the band-tail. © 2007 American Institute of Physics
ACCESSION #
24985379

 

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