TITLE

Comment on “Low Schottky barrier to etched p-GaN using regrown AlInGaN and InGaN contact layer” [J. Appl. Phys. 99, 026106 (2006)]

AUTHOR(S)
Ho, C. Y.
PUB. DATE
April 2007
SOURCE
Journal of Applied Physics;4/1/2007, Vol. 101 Issue 7, p076101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In the Hsueh et al. article [J. Appl. Phys. 99, 026106 (2006)], the authors discussed changes in Schottky barrier heights of Ni/Au contacts to the regrown contact layer on etched p-GaN and adopted the thermionic emission model to analyze their current-voltage data. In this comment we point to the principal theoretical flaw in the analysis of this work.
ACCESSION #
24721761

 

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