Si-based electromagnetic noise suppressors integrated with a magnetic thin film

Sohn, Jaecheon; Han, S. H.; Yamaguchi, Masahiro; Lim, S. H.
April 2007
Applied Physics Letters;4/2/2007, Vol. 90 Issue 14, p143520
Academic Journal
Electromagnetic noise suppressors on Cu transmission lines and oxidized Si substrate integrated with a SiO2 dielectric and a Co–Fe–Al–O magnetic layer are presented. Extremely large signal attenuation is achieved (-90 dB at 20 GHz) while the signal reflection is relatively small, being below -10 dB. These characteristics are attributed to the distributed capacitance (C) formed by the Cu and the oxidized Si substrate and the Cu/SiO2/Co–Fe–Al–O and the distributed inductance (L) due to the magnetic thin film. The main loss mechanism is the L-C resonance and this emphasizes the role of the magnetic thin film providing the inductance.


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