TITLE

Ultraviolet light-emitting diodes with self-assembled InGaN quantum dots

AUTHOR(S)
Park, Il-Kyu; Kwon, Min-Ki; Seo, Seong-Bum; Kim, Ja-Yeon; Lim, Jae-Hong; Park, Seong-Ju
PUB. DATE
March 2007
SOURCE
Applied Physics Letters;3/12/2007, Vol. 90 Issue 11, p111116
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A photoluminescence study showed that the self-assembled InGaN quantum dots (QDs) provide strongly localized recombination sites for carriers and that the piezoelectric field-induced quantum-confined Stark effect (QCSE) is small because the height of QDs is too small to separate the wave functions of electrons and holes. The InGaN QD light-emitting diode (LED) showed an emission peak at 400 nm, and the peak was redshifted with increasing injection current, indicating a small QCSE. The light output power of an InGaN QD LED increased linearly with increasing injection current due to the strongly localized recombination sites of the InGaN QDs.
ACCESSION #
24482221

 

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