Phase change memory at 4Mbit

February 2007
Electronics Weekly;2/28/2007, Issue 2277, p10
Trade Publication
The article reports on the development of phase change memory module by Hitachi Ltd. and Renesas Technology Corp. Phase change memory exploits two-phase changes in electrical resistance of a film caused by Joule heat, which is generated by a current. The memory achieves 416kbyte/s write and read speeds with a 20ns access time, said the firms.


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