TITLE

Phase change memory at 4Mbit

PUB. DATE
February 2007
SOURCE
Electronics Weekly;2/28/2007, Issue 2277, p10
SOURCE TYPE
Trade Publication
DOC. TYPE
Article
ABSTRACT
The article reports on the development of phase change memory module by Hitachi Ltd. and Renesas Technology Corp. Phase change memory exploits two-phase changes in electrical resistance of a film caused by Joule heat, which is generated by a current. The memory achieves 416kbyte/s write and read speeds with a 20ns access time, said the firms.
ACCESSION #
24344299

 

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