TITLE

$6m worth of confidence for UK clockless chip technology firm

PUB. DATE
January 2007
SOURCE
Electronics Weekly;1/24/2007, Issue 2272, p4
SOURCE TYPE
Trade Publication
DOC. TYPE
Article
ABSTRACT
The article reports that Manchester, England-based clockless chip technology firm Silistix has raised $6m in a funding round. The success of the funding round is being seen as a vote of confidence for the firm's self-timed on-chip interconnect technology which has the potential to support lower power system-on-chip devices. The firm has a suite of software tools, called CHAINworks, which are used for the design of customized on-chip interconnects using selftimed circuits.
ACCESSION #
24336913

 

Related Articles

  • Processor cores use clockless interconnect for multimedia.  // Electronics Weekly;7/5/2006, Issue 2248, p4 

    The article reports that the company Silistix which developed an asynchronous, self-timed technique for interconnecting processor cores, is working with a U.S. processor firm on a chip to demonstrate the technology. David Fritz, chief executive officer (CEO) at Silistix says the design on the...

  • Bottom-up approach for carbon nanotube interconnects. Li, Jun; Ye, Qi; Cassell, Alan; Ng, Hou Tee; Stevens, Ramsey; Han, Jie; Meyyappan, M. // Applied Physics Letters;4/14/2003, Vol. 82 Issue 15, p2491 

    We report a bottom-up approach to integrate multiwalled carbon nanotubes (MWNTs) into multilevel interconnects in silicon integrated-circuit manufacturing. MWNTs are grown vertically from patterned catalyst spots using plasma-enhanced chemical vapor deposition. We demonstrate the capability to...

  • Mechanism of reliability failure in Cu interconnects with ultralow-κ materials. Michael, N.L.; Choong-Un Kim; Gillespie, P.; Augur, R. // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p1959 

    This letter presents evidence of an oxidation-driven failure mechanism in Cu interconnects integrated with ultralow-κ materials. It is found that the open pore structure of ultralow-κ materials allows oxidants in the ambient to reach the interconnect structure and induce oxidation of Cu....

  • Calculation of effective dielectric constants for advanced interconnect structures with low-k dielectrics. Seung-Hyun Rhee; Radwin, Martin D.; Man Fai Ng; Martin, Jeremy I.; Erb, Darrell // Applied Physics Letters;9/29/2003, Vol. 83 Issue 13, p2644 

    Effective dielectric constants of advanced interconnects with low-k and ultra-low-k dielectrics were evaluated by two-dimensional capacitance analysis. The analysis was performed for interconnect design rules proposed for 65 nm node high-performance integration. Interconnects with various...

  • New technique and analysis of accelerated electromigration life testing in multilevel metallizations. Muray, L. P.; Rathbun, L. C.; Wolf, E. D. // Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1414 

    Electromigration failure of a series-parallel configuration of aluminum interconnects overlayed on tungsten contacts was measured using a novel multiple lognormal analysis. The analysis examined early failure mechanisms and allowed rapid determination of electromigration parameters on a...

  • PCI Express: The Undisputed King.  // Electronic Design;3/3/2003, Vol. 51 Issue 5, p50 

    Features the peripheral interconnect PCI Express. Routing; Architecture; Benefits offered to designers. INSET: NEED A SWITCH FABRIC NOW? STARFABRIC MAY BE THE ANSWER.

  • Statistical study of electromigration early failures in dual-damascene Cu/oxide interconnects. Lee, Ki-Don; Ogawa, Ennis T.; Matsuhashi, Hideki; Ho, Paul S. // AIP Conference Proceedings;2002, Vol. 612 Issue 1, p61 

    Electromigration (EM) tests have been performed to determine early failure statistics in submicron dual-damascene Cu/oxide interconnects. Monte Carlo simulation, based on the “weakest-link” model, was developed to characterize and determine the failure modes from the cumulative...

  • A high reliability copper dual-damascene interconnection with direct-contact via structure. Ueno, Kazuyoshi; Suzuki, Mieko; Matsumoto, Akira; Motoyama, Koichi; Oda, Noriaki; Miyamoto, Hidenobu; Saito, Shuichi // AIP Conference Proceedings;2002, Vol. 612 Issue 1, p49 

    A new via technology for improving electromigration (EM) reliability of copper (Cu) dual-damascene (DD) interconnection has been developed. Early failure mode of a conventional Cu DD structure is found as void formation at the via-bottom interface, where flux divergence of Cu ions is large due...

  • The electromigration short-length effect in AlCu and Cu interconnects. Filippi, R. G.; Wang, P.-C.; Wachnik, R. A.; Chidambarrao, D.; Korhonen, M. A.; Shaw, T. M.; Rosenberg, R.; Sullivan, T. D. // AIP Conference Proceedings;2002, Vol. 612 Issue 1, p33 

    The electromigration short-length effect is investigated for AlCu and Cu interconnects in SiO[sub 2] dielectrics. Simple models based on first principles are shown to accurately describe the length-dependent electromigration behavior of both metallization systems. The model for AlCu describes...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics