TITLE

Enhanced and retarded diffusion of arsenic in silicon by point defect engineering

AUTHOR(S)
Kong, Ning; Banerjee, Sanjay K.; Kirichenko, Taras A.; Anderson, Steven G. H.; Foisy, Mark C.
PUB. DATE
February 2007
SOURCE
Applied Physics Letters;2/5/2007, Vol. 90 Issue 6, p062107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Arsenic enhanced or retarded diffusion is observed by overlapping the dopant region with, respectively, interstitial-rich and vacancy-rich regions produced by Si implants. Enhanced diffusion can be attributed to interstitial-mediated diffusion during postimplant annealing. Two possible mechanisms for diffusion retardation, interstitial-vacancy recombination and dopant clustering, are analyzed in additional experiments. The point defect engineering approach demonstrated in this letter could be applied to fabrication of n-type ultrashallow junctions.
ACCESSION #
24092155

 

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