Enhanced and retarded diffusion of arsenic in silicon by point defect engineering

Kong, Ning; Banerjee, Sanjay K.; Kirichenko, Taras A.; Anderson, Steven G. H.; Foisy, Mark C.
February 2007
Applied Physics Letters;2/5/2007, Vol. 90 Issue 6, p062107
Academic Journal
Arsenic enhanced or retarded diffusion is observed by overlapping the dopant region with, respectively, interstitial-rich and vacancy-rich regions produced by Si implants. Enhanced diffusion can be attributed to interstitial-mediated diffusion during postimplant annealing. Two possible mechanisms for diffusion retardation, interstitial-vacancy recombination and dopant clustering, are analyzed in additional experiments. The point defect engineering approach demonstrated in this letter could be applied to fabrication of n-type ultrashallow junctions.


Related Articles

  • Rapid thermal annealing of dopants implanted into preamorphized silicon. Seidel, T. E.; Knoell, R.; Poli, G.; Schwartz, B.; Stevie, F. A.; Chu, P. // Journal of Applied Physics;7/15/1985, Vol. 58 Issue 2, p683 

    Focuses on a study which described rapid thermal annealing of dopants implanted into preamorphized silicon. Location where dislocation loops occur; Manner in which spinning dislocations are eliminated; Factors that nearly show normal diffusive behavior for B or arsenic dopants for 10-second...

  • Strain screening by mobile oxygen vacancies in SrTiO3. Yongsam Kim; Disa, Ankit S.; Babakol, Timur E.; Brock, Joel D. // Applied Physics Letters;6/21/2010, Vol. 96 Issue 25, p251901 

    Recently, Freedman et al. [Phys. Rev. B 80, 064108 (2009)] calculated the elastic dipole tensor for several types of point defects in SrTiO3 and showed that it is nearly traceless for oxygen vacancies. Thus, mobile oxygen vacancies are predicted to screen elastic strain fields. Here, we report...

  • Dislocation loops and precipitates associated with excess arsenic in GaAs. Lee, B.-T.; Gronsky, R.; Bourret, E. D. // Journal of Applied Physics;7/1/1988, Vol. 64 Issue 1, p114 

    Presents a study that investigated the formation of dislocation loops from an excess arsenic concentration using transmission electron microscopy. Description of a model that identified types of point defects involved in the formation; Characterization of precipitates; Discussion on possible...

  • TEM Observation of the Dislocations Nucleated from Cracks inside Lightly or Heavily Doped Czochralski SiliconWafers. Shiba, Seiji; Sueoka, Koji // Advances in Condensed Matter Physics;2011, p1 

    The crack propagation from the indent introduced with a Vickers hardness tester at room temperature and the dislocation nucleation from the cracks at 900°C inside lightly boron (B), heavily B, or heavily arsenic (As) doped Czochralski (CZ) Si wafers were investigated with transmission...

  • General model and segregation coefficient measurement for ultrashallow doping by excimer laser annealing. Gillet, Jean-Numa; Degorce, Jean-Yves; Meunier, Michel // Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p222104 

    A general model of ultrashallow doping by excimer laser annealing is derived from only one diffusion-segregation equation. In our model, the relative dopant profile after some laser shots reaches a stationary distribution, which only depends on the segregation and liquid-phase diffusion...

  • Relationship between infrared absorption and resistivity in liquid-encapsulated Czochralski semi-insulating GaAs crystals. Katsumata, Tooru; Okada, Hideo; Obokata, Takeshi; Fukuda, Tsuguo // Journal of Applied Physics;2/15/1987, Vol. 61 Issue 4, p1469 

    Examines the relationship between the infrared (IR) absorption coefficient and the resistivity in undoped and In-doped liquid-encapsulated Czochralski grown semi-insulating (SI) GaAs. Evaluation techniques that have been reported to be effective in the evaluation of defects in GaAs; Typical...

  • Interaction of Point Defects with an Edge Dislocation in the Gradient Theory of Elasticity. Vlasov, N. M. // Physics of the Solid State;Nov2001, Vol. 43 Issue 11, p2083 

    Interaction between a point defect and an edge dislocation is studied in the framework of the gradient theory of elasticity. The change in the energy of the system caused by a displacement of the point defect relative to the dislocation line is calculated. The results of the theoretical analysis...

  • Interplay of Ni and Au atoms with dislocations and vacancy defects generated by moving dislocations in Si. Kveder, V.; Khorosheva, M.; Seibt, M. // Solid State Phenomena;2016, Vol. 242, p147 

    We show experimentally that dislocations in Si crystals can generate some unknown vacancy complexes Vxtrail in their slip planes during their motion at 600°C. Most of these "dislocation trail defects" are not electrically active but can be detected by their reaction with gold atoms during...

  • Effect of point defect reactions on behavior of boron and oxygen in degenerately doped.... Wijaranakula, W. // Applied Physics Letters;6/7/1993, Vol. 62 Issue 23, p2974 

    Examines the effect of point defect reaction on behavior of boron and oxygen in degenerately doped Czochralski silicon after ambient annealing. Accumulation of boron atoms near the silicon surface; Retardation of oxygen outdiffusion; Use of high resolution electron microscopy.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics