TITLE

Impact of epitaxial growth at the heterointerface of a-Si:H/c-Si solar cells

AUTHOR(S)
Fujiwara, Hiroyuki; Kondo, Michio
PUB. DATE
January 2007
SOURCE
Applied Physics Letters;1/1/2007, Vol. 90 Issue 1, p013503
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The authors have demonstrated that interface structures of heterojunction solar cells consisting of hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) have quite large impact on the solar cell performance. In particular, unintentional epitaxial growth was found to occur during an intended a-Si:H i-layer growth on c-Si in plasma-enhanced chemical vapor deposition (PECVD). By the formation of the epitaxial layer at the interface, the solar cell efficiency decreases significantly. Their result shows that the epitaxial layer is formed rather easily in PECVD, even without the presence of H2 gas, and may have affected many previous studies on a-Si:H/c-Si solar cells seriously.
ACCESSION #
23762122

 

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics