Self-propagating, high-temperature combustion synthesis of rhombohedral AlPt thin films

Adams, D. P.; Rodriguez, M. A.; Tigges, C. P.; Kotula, P. G.
December 2006
Journal of Materials Research;Dec2006, Vol. 21 Issue 12, p24
Academic Journal
Sputter-deposited, Al/Pt multilayer thin films of various designs exhibited rapid, self-propagating, high-temperature reactions. With reactant layers maintained at ∼21 °C prior to ignition and films adhered to oxide-passivated silicon substrates, the propagation speeds varied from approximately 20 to 90 m/s depending on bilayer dimension and total film thickness. Contrary to current Al-Pt equilibrium phase diagrams, all multilayers reacted in air and in vacuum transformed into rhombohedral AlPt having a space group R-3(148). Rietveld refinement of AlPt powder (generated from thin film samples) yielded trigonal/hexagonal unit cell lattice parameters of a = 15.634(3) Å and c = 5.308(1) Å; the number of formula units = 39. Rhombohedral AlPt was stable to 550 °C with transformation to a cubic FeSi-type structure occurring above this temperature.


Related Articles

  • Transmission increase upon switching of VO2 thin films on microstructured surfaces. Karakurt, I.; Boneberg, J.; Leiderer, P.; Lopez, R.; Halabica, A.; Haglund, R. F. // Applied Physics Letters;8/27/2007, Vol. 91 Issue 9, p091907 

    The authors compare transmission measurements of near-infrared light through VO2 thin films on smooth substrates and on ordered arrays of silica microspheres. When the samples are heated above the critical temperature for the semiconductor-metallic phase transition, smooth thin films show...

  • Comment on “Smooth relaxed Si0.75Ge0.25 layers on Si(001) via in situ rapid thermal annealing” [Appl. Phys. Lett. 83, 4321 (2003)]. Chrastina, D. // Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5469 

    Comments on an article which describes the growth and in situ annealing of thin Si[sub 0.75]Ge[sub 0.25] films. Methods that produce much better quality material than those presented by the authors of the article; Ways by which further relaxation and increased roughening can be achieved.

  • Thermal strain measurement in sol-gel lead zirconate titanate thin films. Berfield, T. A.; Carroll, J. F.; Payne, D. A.; Sottos, N. R. // Journal of Applied Physics;Dec2009, Vol. 106 Issue 12, p123501 

    A fluorescence-based digital image correlation (DIC) technique is used to characterize the in-plane strain development of blanket sol-gel derived lead zirconate titanate thin films deposited on platinized silicon substrates. The in-plane strain is also measured within film line features...

  • Effects of N and F passivation on the reliability and interface structure of 700 °C grown ultrathin silicon oxide/Si(100) gate films. Yamada, Hiroshi // Journal of Applied Physics;Jan2008, Vol. 103 Issue 1, p014502 

    Correlations between reliability and interfacial structure changes of ultrathin silicon oxide gate films grown at 700 °C with in situ pyrolytic-gas passivation (PGP) were investigated. PGP uses a little pyrolytic N2O and NF3 during ultradry oxidation with pure O2 at less than 1 ppb humidity...

  • Formation mechanism of preferential c-axis oriented ZnO thin films grown on p-Si substrates. Lee, H.S.; Lee, J.Y.; Kim, T.W. // Journal of Materials Science;May2004, Vol. 39 Issue 10, p3525 

    Reports on the formation mechanism of preferential c-axis oriented zinc oxide thin films grown on silicon substrates. Applications of the thin films in optoelectronic devices; Advantage of the availability of zinc heterostructurescompared with sapphires; Use of the radio-frequency magnetron...

  • Semiconductor physics: Transport news. Boland, John J. // Nature;2/9/2006, Vol. 439 Issue 7077, p671 

    The article presents a study which revealed the impact of the surface effects in thin silicon films on the transport of charge carriers and on device performance. The result was considered as a new opportunity for device physics. Researchers added that the position of the Fermi energy is still...

  • Studies On Various Organic Reactions In Thin Film Agitated Evaporators For Better Process Efficiency. Dhuldhoya, Nikhilesh G. // International Journal of Applied Chemistry;2009, Vol. 5 Issue 1, p57 

    Emerging equipments coined with advanced processing techniques & operational methods (Batch to Continuous Process) provides spectacular improvements in process plants, markedly shrinking their size and significantly boosting their efficiency & makes process safer and economical. Thus our studies...

  • Abnormal reduction of Eu ions and luminescence in CaB2O4: Eu thin films. Hao, J. H.; Gao, J. // Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3720 

    Thin films of CaB2O4: Eu were deposited on glass substrates by spray pyrolysis. The abnormal reduction of Eu3+ to Eu2+ in as-grown thin films was found at the growth temperatures from 300 to 500 °C. Blue cathodoluminescence was observed by annealing films in air, correlating with further...

  • Deposition from Supersonic Beams (SuMBE): a Kinetic Approach for Controlling Thin Film Properties. Pallaoro, A.; Toccoli, T.; Aversa, L.; Boschetti, A.; Chiarani, S.; Coppedè, N.; Corradi, C.; Mazzola, M.; Nardi, M.; Siviero, F.; Verucchi, R.; Iannotta, S. // AIP Conference Proceedings;2005, Vol. 762 Issue 1, p886 

    Supersonic beams of organic molecules seeded in light carrier gases are a viable method to control the deposition of highly ordered thin films, to activate kinetically chemical reactions to functionalize surfaces or to synthesize hybrid compounds. The advantage of supersonic molecular beam...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics