TITLE

Infineon Touts 65nm Complex Circuit Testing

AUTHOR(S)
Taylor, Colleen
PUB. DATE
December 2006
SOURCE
Electronic News;12/11/2006, Vol. 52 Issue 50, p15
SOURCE TYPE
Trade Publication
DOC. TYPE
Article
ABSTRACT
The article reports on a test conducted by researchers at Infineon Technologies AG on what the firm claims as the first complex circuit fabricated using a new 65 nanometer multi-gate transistor architecture. Its low current is expected to increase energy efficiency and battery life of portable devices. It was found that multi-gate transistor is as powerful as the single-gate technology but consumes less energy.
ACCESSION #
23509793

 

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