CSR Claims World's First Class 1 Bluetooth Silicon

Mutschler, Ann Steffora
December 2006
Electronic News;12/4/2006, Vol. 52 Issue 49, p5
Trade Publication
The article reports on the announcement of wireless technology chip provider CSR that it has qualified BlueCore5-FM that it says is the world's first Class 1 Bluetooth single-chip solution. BlueCore5-FM is part of the company's fifth generation silicon and is also the first product from the BlueMedia roadmap, which includes a sensitive FM radio receiver in a small, single-chip design.


Related Articles

  • Manufacturing integration considerations of through-silicon, via etching. Lassig, Steve // Solid State Technology;Dec2007, Vol. 50 Issue 12, p48 

    The article examines the manufacturing considerations regarding the integration of through-silicon vias (TSV) in advanced three-dimensional integrated circuit (3D IC) designs. Etch requirements for various integration schemes were summarized. Via-first before front end of line (feol), Via-first...

  • Near Surface Photo-Voltage For Silicon Wafer Metrology. Tsidilkovski, Edward; Steeples, Kenneth // AIP Conference Proceedings;2005, Vol. 788 Issue 1, p589 

    High modulation frequency surface photo-voltage response, through non contact capacitance measurements on silicon wafers, up to 300mm diameter have been developed to provide a sensitive, repeatable quantification of doping density, crystal damage, and trace contamination. Real-time, non-contact...

  • Selecting Protection Devices: TVS Diodes vs. Metal-Oxide Varistors. GOLDMAN, STEVEN J. // Power Electronics Technology;Jun2010, Vol. 36 Issue 6, p29 

    The article presents comparison between two different integrated circuit (IC) protection devices, the silicone diodes and metal oxide varistors which are used to protect delicate circuits against electrostatic discharge and other such transient events. Basic working of protective devices, is...

  • Model of Laser Gettering of Fast-Diffusing Impurities. Pilipenko, V.; Ponomar', V.; Gorushko, V. // Journal of Engineering Physics & Thermophysics;May2005, Vol. 78 Issue 3, p616 

    A model of gettering of fast-diffusing impurities in silicon wafers has been proposed; this model makes it possible to determine efficient gettering regimes ensuring the production of high-quality silicon wafers with reproducible characteristics for using them in the technology of creation of...

  • The Chemical History of Electronics. Brock, David // Chemical Heritage;Spring2005, Vol. 23 Issue 1, p31 

    Recounts the first operation of integrated circuits at Fairchild Semiconductor. Critical capacities for making a real integrated circuit that were available for the company in 1959; Information on the planar process for making silicon transistors; Approach used to isolate electronically the...

  • A sound barrier for silicon? Muller, David A. // Nature Materials;Sep2005, Vol. 4 Issue 9, p645 

    For the first time in thirty five years, the clockspeed of the fastest commercial computer chips has not increased. Is the semiconductor industry just pausing for breath or about to suffer a fate similar to that of aerospace?

  • Leakage suppression by asymmetric area electrodes in metal-semiconductor-metal photodetectors. Okyay, Ali K.; Chi On Chui; Saraswat, Krishna C. // Applied Physics Letters;2/6/2006, Vol. 88 Issue 6, p063506 

    We have studied the effect of varying electrode area asymmetry on the leakage behavior of metal-semiconductor-metal photodetectors (MSM-PDs). We demonstrate, an effective suppression of dark current (Idark) with the application of asymmetric electrode area and appropriate biasing scheme in...

  • A Study on Wafer and feature size. XiaoMing Hu // Advanced Materials Research;2014, Vol. 1049-1050, p762 

    the paper introduced the bare silicon crystal how to become a wafer. then, it told the processing of wafers to produce integrated circuits. Today, most integrated circuits (ICs) are made of silicon. every integrated circuit is tested and functional and formed a dies. At last, the article explain...

  • National, Silicon Labs team up for power-brick reference design. Rako, Paul // EDN Europe;Jul2010, Vol. 57 Issue 7, p13 

    The article reports that Silicon Laboratories Inc. and National Semiconductor Corp. have both contributed intergarted circuits (ICs) to a power-brick reference design they co-developed. The design targets use in networking, communications, and high-end server applications. Operating at a 400-kHz...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics