Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO2 dielectric and germanium interfacial passivation layer

Hyoung-Sub Kim; Ok, Injo; Manhong Zhang; Lee, T.; Zhu, F.; Yu, L.; Lee, Jack C.; Koveshnikov, S.; Tsai, W.; Tokranov, V.; Yakimov, M.; Oktyabrsky, S.
November 2006
Applied Physics Letters;11/27/2006, Vol. 89 Issue 22, p222904
Academic Journal
The authors present depletion-mode n-channel GaAs metal-oxide-semiconductor field-effect transistor (MOSFET) with a TaN gate electrode, a thin HfO2 gate dielectric, and a thin germanium (Ge) interfacial passivation layer (IPL). Depletion-mode MOSFET on the molecular-beam epitaxy-grown n-type GaAs layer with an equivalent oxide thickness of 17 Ã… exhibits excellent transistor output characteristics such as a maximum transconductance of 176 mS/mm and a maximum effective electron mobility of 970 cm2/V s. MOSFET shows a surface accumulation channel conduction above flatband condition, indicating that a high quality interface can be achieved using a Ge IPL on GaAs substrate.


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