Hole-injection isomerization of photochromic diarylethene for organic molecular memory

Tsujioka, Tsuyoshi; Iefuji, Natsuko; Jiapaer, Aini; Irie, Masahiro; Nakamura, Shinichiro
November 2006
Applied Physics Letters;11/27/2006, Vol. 89 Issue 22, p222102
Academic Journal
Hole-injection recording of organic semiconductor memory with a photochromic diarylethene memory layer was investigated by using a device structure with an electron block layer (EBL). Devices with thicker EBL showed faster current decrease, that is, high isomerization efficiency. The high efficiency of isomerization originating from the long lifetime of a cationic state was achieved by hole injection with low voltage. Hole-isomerization recording has the potential for very low power consumption organic memory.


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