Latent spatial instability of current in high-power bipolar switches

Gorbatyuk, A. V.
December 2006
Technical Physics Letters;Dec2006, Vol. 32 Issue 12, p999
Academic Journal
A theory describing the injection instability in high-power bipolar semiconductor switches at a current density of J ∼ 1 kA/cm2 and a collector field strength of E > 5 × 104 V/cm is proposed. It is established that, if the efficiency of cathode injection source increases with J and E, fluctuations in the current distribution over wafer area with a wavelength on the order of λ ∼ 100 μm (not related to the wafer transverse size) can develop in such devices. The corresponding volume fluctuations in the charge carrier densities, potentials, field strength, and current density are localized in the bulk, at a depth that is much smaller than the plate thickness. This latent instability is not related to the sign of the external differential resistance, so that internal damping factors are necessary in order to prevent its development.


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