Active RF Pulse Compression using Electrically Controlled Semiconductor Switches

Guo, Jiquan; Tantawi, Sami
November 2006
AIP Conference Proceedings;2006, Vol. 877 Issue 1, p273
Academic Journal
In this paper, we present the recent results of our research on the ultra-high power fast silicon RF switch and its application on active X-Band RF pulse compression systems. This switch is composed of a group of PIN diodes on a high purity silicon wafer and has achieved a switching time of 300ns. The wafer is inserted into a cylindrical waveguide operating in the TE01 mode. Switching is performed by injecting carriers into the bulk silicon through a high current pulse. The RF energy is stored in a room-temperature, high-Q 375 ns delay line; it is then extracted out of the line in a short time using the switch. The pulse compression system has achieved a gain of 8, which is the ratio between output and input power. © 2006 American Institute of Physics


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