Mechanism of improved channel carrier mobility for stacked Y2O3/HfO2 gate dielectric

Feng Zhu; Chang Yong Kang; Se Jong Rhee; Chang Hwan Choi; Krishnan, Siddarth A.; Manhong Zhang; Hyoung-Sub Kim; Taekhwi Lee; Injo Ok; Thareja, Gaurav; Lee, Jack C.
October 2006
Applied Physics Letters;10/23/2006, Vol. 89 Issue 17, p173501
Academic Journal
Stacked Y2O3/HfO2 gate dielectric, compared to HfO2, shows significantly enhanced electron channel mobility at different temperatures. This mobility improvement can be attributed to reduced remote phonon scattering, which is associated with the smaller ionic polarization of Y2O3, and the suppressed Coulomb scattering due to less electron trapping in the bulk of high-κ layer and reduced metal impurities in the substrate.


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