Nanowire-based multiple quantum dot memory

Nilsson, Henrik A.; Thelander, Claes; Fröberg, Linus E.; Wagner, Jakob B.; Samuelson, Lars
October 2006
Applied Physics Letters;10/16/2006, Vol. 89 Issue 16, p163101
Academic Journal
The authors propose and demonstrate an alternative memory concept in which a storage island is connected to a nanowire containing a stack of nine InAs quantum dots, each separated by thin InP tunnel barriers. Transport through the quantum dot structure is suppressed for a particular biasing window due to misalignment of the energy levels. This leads to hysteresis in the charging/discharging of the storage island. The memory operates for temperatures up to around 150 K and has write times down to at least 15 ns. A comparison is made to a nanowire memory based on a single, thick InP barrier.


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