Individual classification of buried transistors in live microprocessors by functional infrared emission spectral microscopy

Oblefias, Wilma; Soriano, Maricor; Tarun, Alvarado; Saloma, Caesar
October 2006
Applied Physics Letters;10/9/2006, Vol. 89 Issue 15, p151113
Academic Journal
The authors classify good, leaky, and broken field effect transistors (FET’s) in a live 90 nm flip-chip microprocessor using functional infrared emission spectral microscopy. The FET’s are in the active layer that is sandwiched between a thick heat-absorbing silicon material and a highly reflecting grid of metal interconnects. Together they are optically imaged only as a single bright blob. They classify FET’s individually from their distinct electroluminescence spectra that are recovered efficiently by spectral decomposition of the detected composite spectrum. Leaky FET’s have no apparent structural damage and are detectable only in live microprocessors.


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