TITLE

Doping dependence of the carrier lifetime crossover point upon dissociation of iron-boron pairs in crystalline silicon

AUTHOR(S)
Macdonald, D.; Roth, T.; Deenapanray, P. N. K.; Trupke, T.; Bardos, R. A.
PUB. DATE
October 2006
SOURCE
Applied Physics Letters;10/2/2006, Vol. 89 Issue 14, p142107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The excess carrier density at which the carrier lifetime in crystalline silicon remains unchanged after dissociating iron-boron pairs, known as the crossover point, is reported as a function of the boron dopant concentration. Modeling this doping dependence with the Shockley-Read-Hall model does not require knowledge of the iron concentration and suggests a possible refinement of reported values of the capture cross sections for electrons and holes of the acceptor level of iron-boron pairs. In addition, photoluminescence-based measurements were found to offer some distinct advantages over traditional photoconductance-based techniques in determining recombination parameters from low-injection carrier lifetimes.
ACCESSION #
22752179

 

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