TITLE

Low temperature metallic state induced by electrostatic carrier doping of SrTiO3

AUTHOR(S)
Nakamura, H.; Takagi, H.; Inoue, I. H.; Takahashi, Y.; Hasegawa, T.; Tokura, Y.
PUB. DATE
September 2006
SOURCE
Applied Physics Letters;9/25/2006, Vol. 89 Issue 13, p133504
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Transport properties of SrTiO3-channel field-effect transistors with parylene organic gate insulator have been investigated. By applying gate voltage, the sheet resistance falls below R□∼10 kΩ at low temperatures, with carrier mobility exceeding 1000 cm2/V s. The temperature dependence of the sheet resistance taken under constant gate voltage exhibits metallic behavior (dR/dT>0). Results demonstrate an insulator to metal transition in SrTiO3 driven by electrostatic carrier density control.
ACCESSION #
22643154

 

Related Articles

  • Delta-doped epitaxial La:SrTiO3 field-effect transistor. Nishio, K.; Matvejeff, M.; Takahashi, R.; Lippmaa, M.; Sumiya, M.; Yoshikawa, H.; Kobayashi, K.; Yamashita, Y. // Applied Physics Letters;6/13/2011, Vol. 98 Issue 24, p242113 

    We show that by delta doping a deep depletion layer at a SrTiO3/CaHfO3 interface with La, it is possible to achieve a separation of physical dopants from the current transport layer in SrTiO3. This allows us to construct an epitaxial top-gate field-effect transistor that can switch a channel...

  • LaMnO3/SrMnO3 interfaces with coupled charge-spin-orbital modulation. Yamada, Hiroyuki; Kawasaki, M.; Lottermoser, T.; Arima, T.; Tokura, Y. // Applied Physics Letters;7/31/2006, Vol. 89 Issue 5, p052506 

    The artificial perovskite superlattices composed of LaMnO3 and SrMnO3 have been investigated to elucidate the interface electronic phases created by adjoining the two Mott insulators. Charge transfer at the interface due to chemical potential difference, as observed in p-n junctions of...

  • High-speed, short-channel polycrystalline silicon thin-film transistors. Brotherton, S.D.; Glasse, C.; Glaister, C.; Green, P.; Rohlfing, F.; Ayres, J.R. // Applied Physics Letters;1/12/2004, Vol. 84 Issue 2, p293 

    Results are presented on the performance of low-temperature, short-channel polycrystalline silicon (poly-Si) thin-film transistors (TFTs), with channel length down to 0.5 μm, and scaled gate oxide thickness down to 20 nm. Good TFT switching characteristics were obtained, and the uniformity of...

  • Magnetoresistance in graphene under quantum limit regime. Zhou, Yang-Bo; Wu, Han-Chun; Yu, Da-Peng; Liao, Zhi-Min // Applied Physics Letters;3/4/2013, Vol. 102 Issue 9, p093116 

    We report the magnetoresistance (MR) in single-layer graphene field-effect transistors at different gate voltages. At low temperatures, the MR exhibits fluctuations at Dirac point, which is attributed to quantum interference effect. Apart from the Dirac point, the MR shows a linear behavior...

  • Observation of localized states in atomically thin MoS2 field effect transistor. Ghatak, Subhamoy; Pal, Atindra Nath; Ghosh, Arindam // AIP Conference Proceedings;Dec2013, Vol. 1566 Issue 1, p405 

    We present electrical transport and low frequency (1/f) noise measurements on mechanically exfoliated single, bi and trilayer MoS2 -based FET devices on Si/SiO2 substrate. We find that the electronic states in MoS2 are localized at low temperatures (T) and conduction happens through variable...

  • Low-temperature solution-processed alumina as gate dielectric for reducing the operating-voltage of organic field-effect transistors. Peng, Jun; Sun, Qijun; Wang, Suidong; Wang, Hai-Qiao; Ma, Wanli // Applied Physics Letters;8/5/2013, Vol. 103 Issue 6, p061603 

    We report a facile route for developing solution-processed Al2O3 film at low temperature (<180 °C) and its application in organic field-effect transistors (OFETs). Compared to OFETs using conventional SiO2 gate dielectric, the pentacene-based OFETs using Al2O3 thin film gate dielectric...

  • Observation of Vortex Lattice Related Anomalies in Polycrystalline YBa2Cu3O7-x near the Superconducting Transition. Ota, S. B. // Journal of Modern Physics (21531196);Oct2012, Vol. 3 Issue 10, p1487 

    The d.c. I-V characteristic of polycrystalline YBa2Cu3O7-x high temperature superconductors (HTSC) is measured near the transition temperature (Tc). The Tc was found to be 90 K with a width of 2 K. The voltage was measured at various current values and with reversing the current. A difference in...

  • Input Noise Voltage Below 1 nV/Hz at 1 kHz in the HEMTs at 4.2 K. Liang, Y.; Dong, Q.; Gennser, U.; Cavanna, A.; Jin, Y. // Journal of Low Temperature Physics;Jun2012, Vol. 167 Issue 5/6, p632 

    Specific High Electron Mobility Transistors (HEMTs) have been realized and characterized. At 4.2 K, with a drain-source current I of 1.55 mA and drain-source voltage V of 100 mV, the transistor has the following electrical characteristics: a transconductance and an output conductance of 69 and...

  • Low-voltage ferroelectric-paraelectric superlattices as gate materials for field-effect transistors. Misirlioglu, I.; Sen, C.; Kesim, M.; Alpay, S. // Journal of Materials Science;Jan2016, Vol. 51 Issue 1, p487 

    The demand for new materials to be used in field-effect transistors and similar devices with low energy loss is more than ever before as integrated circuits have become a considerable source of energy consumption. One of the challenges in designing such energy efficient logic devices is finding...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics