Low temperature metallic state induced by electrostatic carrier doping of SrTiO3

Nakamura, H.; Takagi, H.; Inoue, I. H.; Takahashi, Y.; Hasegawa, T.; Tokura, Y.
September 2006
Applied Physics Letters;9/25/2006, Vol. 89 Issue 13, p133504
Academic Journal
Transport properties of SrTiO3-channel field-effect transistors with parylene organic gate insulator have been investigated. By applying gate voltage, the sheet resistance falls below R□∼10 kΩ at low temperatures, with carrier mobility exceeding 1000 cm2/V s. The temperature dependence of the sheet resistance taken under constant gate voltage exhibits metallic behavior (dR/dT>0). Results demonstrate an insulator to metal transition in SrTiO3 driven by electrostatic carrier density control.


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