Computational analysis of thermally stimulated currents in Bi12TiO20 single crystals

Aneva, Z.; Nesheva, D.; Vateva, E.
September 2006
Journal of Applied Physics;9/1/2006, Vol. 100 Issue 5, p053704
Academic Journal
Critical analysis of several methods for determination of trap parameters using the rate equations of the thermally stimulated currents (TSCs) has been performed and equations for the precise determination of the energy depth of a single trap have been suggested for both slow and fast retrappings. In the slow retrapping regime four different temperature dependences of the capture cross section of the trap can be considered. The approach developed has been applied to determine the main parameters of traps in Bi12TiO20 single crystals from the TSC spectra taken in the temperature range of 77–300 K. The thermal cleaning method has been applied to determine the number of the TSC bands in this temperature range and 15 traps have been resolved. Based on this result a multiple peak fitting has been performed, which ensured an excellent coincidence between the total experimental curve and the fitting one. An investigation of TSC above room temperature was also carried out, which has resolved four deep traps having TSC maxima at around 325, 350, 370, and 390 K. A value of 0.92 eV has been obtained for the depth of the “350 K” trap.


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