126nm deep UV light makes SiO2 on wafers at room temp

S. B.
July 2006
Electronics Weekly;7/19/2006, Issue 2250, p36
Trade Publication
The article investigates the claim made by the University College London, England, of producing silicon dioxide on wafers at room temperature. Professor and head researcher Ian Boyd describes that the wafer is illuminated in an oxygen atmosphere. The wavelength of the light used is 126nm, much lower than that of x-rays. He adds that to oxidise silicon on a wafer, atomic oxygen should have characteristics of sticking it to the surface.


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