Luminescence spectra, efficiency, and color characteristics of white-light-emitting diodes based on p-n InGaN/GaN heterostructures with phosphor coatings

Badgutdinov, M. L.; Korobov, E. V.; Luk’yanov, F. A.; Yunovich, A. É; Kogan, L. M.; Gal'china, N. A.; Rassokhin, I. T.; Soshchin, N. P.
June 2006
Semiconductors;Jun2006, Vol. 40 Issue 6, p739
Academic Journal
The luminescence spectra, efficiency, and color characteristics of white-light-emitting diodes fabricated from p-n InGaN/AlGaN/GaN blue-light-emitting heterostructures grown on SiC substrates and coated with yellow-green phosphors based on the rare-earth-doped yttrium-aluminum garnets were studied. The efficiency of blue-emitting diodes is as high as 22% at a current of 350 mA and a voltage of 3.3 V. The white-emitting diodes have luminous efficiency as high as 40 lm/W and luminous flux up to 50 lm at 350 mA.


Related Articles

  • Luminescence spectra of blue and green light-emitting diodes based on multilayer InGaN/AlGaN/GaN heterostructures with quantum wells. Zolina, K. G.; Kudryashov, V. E.; Turkin, A. N.; Yunovich, A. É. // Semiconductors;Sep97, Vol. 31 Issue 9, p901 

    The luminescence spectra of blue and green light-emitting diodes based on In[sub x]Ga[sub 1-x]N/Al[sub y]Ga[sub 1-y]N/GaN heterostructures with a thin (2-3 nm) In[sub x]Ga[sub 1-x]N active layer have been investigated in the temperature and current intervals 100-300 K and J = 0.01-20 mA,...

  • Luminescence and electrical properties of InGaN/AlGaN/GaN light emitting diodes with multiple quantum wells. Kudryashov, V. E.; Turkin, A. N.; Yunovich, A. É.; Kovalev, A. N.; Manyakhin, F. I. // Semiconductors;Apr99, Vol. 33 Issue 4, p429 

    Luminescence spectra of light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with multiple quantum wells are studied for currents in the range J = 0.15 µA-150 mA. The comparatively high quantum efficiency for low J (J[sub max] = 0.5-1 mA) is a consequence of a low probability for...

  • White Electroluminescence Using ZnO Nanotubes/GaN Heterostructure Light-Emitting Diode. Sadaf, J. R.; Israr, M. Q.; Kishwar, S.; Nur, O.; Willander, M. // Nanoscale Research Letters;Jun2010, Vol. 5 Issue 6, p957 

    We report the fabrication of heterostructure white light–emitting diode (LED) comprised of n-ZnO nanotubes (NTs) aqueous chemically synthesized on p-GaN substrate. Room temperature electroluminescence (EL) of the LED demonstrates strong broadband white emission spectrum consisting of...

  • Screen-printed phosphor coatings for white LED emission. Burgin, Julien; Jubera, Véronique; Debéda, Hélène; Glorieux, Benoit; Garcia, Alain; Lucat, Claude // Journal of Materials Science;Apr2011, Vol. 46 Issue 7, p2235 

    We demonstrate the possibilities offered by the screen-printing technique to create thick layers of rare earth doped phosphors on glass slides for light-emitting diodes (LEDs). Using commercial LEDs, the effect of the layer thickness and phosphor concentration on luminescence emission and...

  • LEDs based on InAs/InAsSb heterostructures for CO2 spectroscopy (λ = 4.3 μm). Golovin, A. S.; Astakhova, A. P.; Kizhaev, S. S.; Il'inskaya, N. D.; Serebrennikova, O. Yu.; Yakovlev, Yu. P. // Technical Physics Letters;Jan2010, Vol. 36 Issue 1, p47 

    Light-emitting diodes (LEDs) operating in a 4.1–4.3 μm wavelength range have been created on the basis of InAs/InAsSb heterostructures grown by metalorganic vapor-phase epitaxy. The output radiation power of LEDs is increased using flip-chip design. Investigation of the...

  • Electroluminescence spectra of ultraviolet light-emitting diodes based on p- n-heterostructures coated with phosphors. Gal’china, N.; Kogan, L.; Soshchin, N.; Shirokov, S.; Yunovich, A. // Semiconductors;Sep2007, Vol. 41 Issue 9, p1126 

    The electroluminescence spectra of light-emitting diodes based on p- n heterostructures of the InGaN/AlGaN/GaN type are studied in the near-ultraviolet spectral region (360–405 nm). The spectra are peaked at the wavelengths 385 and 395 nm, and the intensity of emission falls exponentially...

  • MBE-Grown Si : Er Light-Emitting Structures: Effect of Implantation and Annealing on the Luminescence Properties. Sobolev, N. A.; Denisov, D. V.; Emel'yanov, A. M.; Shek, E. I.; Parshin, E. O. // Physics of the Solid State;Jan2005, Vol. 47 Issue 1, p117 

    Features appearing in the photo- and electroluminescence spectra of light-emitting structures based on MBE-grown Si : Er layers are studied. The luminescence properties of Si layers implanted by Er and O ions were used as a reference. The temperature quenching of the photoluminescence intensity...

  • Optical properties of blue light-emitting diodes in the InGaN/GaN system at high current densities. Bochkareva, N. I.; Gorbunov, R. I.; Klochkov, A. V.; Lelikov, Yu. S.; Martynov, I. A.; Rebane, Yu. T.; Belov, A. S.; Shreter, Yu. G. // Semiconductors;Nov2008, Vol. 42 Issue 11, p1355 

    The current-voltage and brightness-voltage characteristics and the electroluminescence spectra of blue InGaN/GaN-based light-emitting diodes are studied to clarify the cause of the decrease in the emission efficiency at high current densities and high temperatures. It is found that the linear...

  • White organic light-emitting diodes based on spectral broadening in electroluminescence due to formation of interfacial exciplexes. Singh, Samarendra P.; Mohapatra, Y. N.; Qureshi, M.; Sundar Manoharan, S. // Applied Physics Letters;3/14/2005, Vol. 86 Issue 11, p113505 

    We demonstrate white organic light-emitting diodes (OLEDs) having spectral width of approximately 260 nm in electroluminescence (EL) in a simple bilayer structure, consisting of TPD and zinc benzothiazole, without taking recourse to complex strategies such as blending and doping. The EL is...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics