TITLE

Luminescence spectra, efficiency, and color characteristics of white-light-emitting diodes based on p-n InGaN/GaN heterostructures with phosphor coatings

AUTHOR(S)
Badgutdinov, M. L.; Korobov, E. V.; Luk’yanov, F. A.; Yunovich, A. É; Kogan, L. M.; Gal'china, N. A.; Rassokhin, I. T.; Soshchin, N. P.
PUB. DATE
June 2006
SOURCE
Semiconductors;Jun2006, Vol. 40 Issue 6, p739
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The luminescence spectra, efficiency, and color characteristics of white-light-emitting diodes fabricated from p-n InGaN/AlGaN/GaN blue-light-emitting heterostructures grown on SiC substrates and coated with yellow-green phosphors based on the rare-earth-doped yttrium-aluminum garnets were studied. The efficiency of blue-emitting diodes is as high as 22% at a current of 350 mA and a voltage of 3.3 V. The white-emitting diodes have luminous efficiency as high as 40 lm/W and luminous flux up to 50 lm at 350 mA.
ACCESSION #
21908760

 

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