TITLE

High-power laser diodes (λ = 808—850 nm) based on asymmetric separate-confinement heterostructures

AUTHOR(S)
Andreev, A. Yu.; Leshko, A. Yu.; Lyutetskiĭ, A. V.; Marmalyuk, A. A.; Nalyot, T. A.; Padalitsa, A. A.; Pikhtin, N. A.; Sabitov, D. R.; Simakov, V. A.; Slipchenko, S. O.; Khomylev, M. A.; Tarasov, I. S.
PUB. DATE
May 2006
SOURCE
Semiconductors;May2006, Vol. 40 Issue 5, p611
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Symmetric and asymmetric separate-confinement AlGaAs/GaAs heterostructures have been grown by MOCVD in accordance with the concept of design of high-power semiconductor lasers. High-power laser diodes with a 100-µm aperture, emitting in the 808–850-nm range, were fabricated from these structures. The internal optical loss in asymmetric separate-confinement heterostructures with broadened waveguide is reduced to 0.5 cm−1. In the lasers with 1.7-µm-thick waveguide, the output optical power of 7.5 W in CW mode was achieved owing to reduction of the optical emission density at the cavity mirror to 4 mW/cm2.
ACCESSION #
21908742

 

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